VS-GA300TD60S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 530A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$181.99167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the VS-GA300TD60S IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-GA300TD60S finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-GA300TD60S.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 530 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
- Current - Collector Cutoff (Max): 750 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Dual INT-A-PAK (3 + 8)
- Supplier Device Package: Dual INT-A-PAK
Related Products
Infineon Technologies
FD1600/1200R17KF6C_B2
Microsemi Corporation
APTGT30A170D1G
Littelfuse Inc.
MG17150D-BN4MM
Infineon Technologies
DDB6U25N16VRBOMA1
Vishay General Semiconductor - Diodes Division
50MT060WH
Powerex Inc.
CM100RL-12NF
Infineon Technologies
BSM50GP60BOSA1
Infineon Technologies
IRG5U150HF06A
Infineon Technologies
IRG5U100HH06E
onsemi