BSM50GP60BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 70A 250W
$0.00
Available to order
Reference Price (USD)
10+
$107.44500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's BSM50GP60BOSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the BSM50GP60BOSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the BSM50GP60BOSA1 power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
IRG5U150HF06A
Infineon Technologies
IRG5U100HH06E
onsemi
NXH80T120L2Q0P2TG
Infineon Technologies
FB20R06W1E3B11HOMA1
Powerex Inc.
CM100TU-24F
Vishay General Semiconductor - Diodes Division
VS-GB150LH120N
IXYS
MIO1800-17E10
IXYS
VIO75-12P1
Infineon Technologies
BSM30GP60BOSA1
Powerex Inc.