VS-GB100TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$329.28333
Exquisite packaging
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The VS-GB100TH120U from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-GB100TH120U in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-GB100TH120U represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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