VS-GB100TS60NPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 108A INT-A-PAK
$0.00
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Reference Price (USD)
15+
$88.32467
Exquisite packaging
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Engineered for excellence, the VS-GB100TS60NPBF IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-GB100TS60NPBF finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-GB100TS60NPBF.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 108 A
- Power - Max: 390 W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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