MII300-12E4
IXYS
IXYS
IGBT MOD 1200V 280A 1100W Y3LI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with IXYS's MII300-12E4, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MII300-12E4 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MII300-12E4 module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 280 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
- Current - Collector Cutoff (Max): 3.3 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
Related Products
onsemi
NXH80B120H2Q0SNG
IXYS
VKI50-06P1
Vishay General Semiconductor - Diodes Division
VS-20MT120UFAPBF
IXYS
MWI450-12E9
Infineon Technologies
IRG7U75HF12A
IXYS
MWI300-12E9
Powerex Inc.
CM300DY-28H
Microsemi Corporation
APTGT100A1202G
Vishay General Semiconductor - Diodes Division
VS-GB100TH120U
onsemi