VS-GB150YG120NT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 182A ECONO3 4PACK
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Optimize your power systems with Vishay General Semiconductor - Diodes Division's VS-GB150YG120NT, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The VS-GB150YG120NT is particularly effective in high-ambient-temperature environments like steel mill drives. Vishay General Semiconductor - Diodes Division brings decades of semiconductor expertise to every VS-GB150YG120NT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 182 A
- Power - Max: 892 W
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 200A
- Current - Collector Cutoff (Max): 120 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ECONO3 4PACK
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