VS-GB200LH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 370A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$416.98083
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's VS-GB200LH120N stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the VS-GB200LH120N enables higher power density in MRI gradient amplifiers. Choose Vishay General Semiconductor - Diodes Division for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 370 A
- Power - Max: 1562 W
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ)
- Current - Collector Cutoff (Max): 100 nA
- Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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