VS-GB75LA60UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 109A 447W SOT227
$0.00
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Reference Price (USD)
160+
$25.76400
Exquisite packaging
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The VS-GB75LA60UF from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the VS-GB75LA60UF is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Vishay General Semiconductor - Diodes Division's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 109 A
- Power - Max: 447 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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