VS-GB90DA60U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 147A 625W SOT227
$0.00
Available to order
Reference Price (USD)
160+
$63.05125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GB90DA60U IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GB90DA60U offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GB90DA60U in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GB90DA60U IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 147 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4
- Supplier Device Package: SOT-227
Related Products
Infineon Technologies
FF600R12ME4CB11BOSA1
Powerex Inc.
CM600DU-24NF
Powerex Inc.
CM200EXS-34SA
Powerex Inc.
CM300DY-24NF
Powerex Inc.
CM200DU-24F
IXYS
IXGN60N60C2D1
Infineon Technologies
IFF600B12ME4B11BOSA1
Microsemi Corporation
APTGT75H60T2G
Microsemi Corporation
APTGF165A60D1G
Powerex Inc.