VS-MURB1020CT-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A D2PAK
$0.82
Available to order
Reference Price (USD)
1+
$0.80000
50+
$0.66600
100+
$0.55200
500+
$0.44600
1,000+
$0.36600
2,500+
$0.33600
5,000+
$0.32600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-MURB1020CT-M3 from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the VS-MURB1020CT-M3 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Infineon Technologies
BAS12507WH6327XTSA1
Rohm Semiconductor
DA228KFHT146
Rohm Semiconductor
DA204UMTL
IXYS
MDMA35P1600TG
Vishay General Semiconductor - Diodes Division
BYVB32-50-E3/81
Panjit International Inc.
MBR650FCT_T0_00001
SMC Diode Solutions
12CWQ04FN
Vishay General Semiconductor - Diodes Division
VB40170C-E3/8W
onsemi
BAT54CLT3G
Diodes Incorporated