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WNSC04650T6J

WeEn Semiconductors
WNSC04650T6J Preview
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$2.17
Available to order
Reference Price (USD)
1+
$2.17000
500+
$2.1483
1000+
$2.1266
1500+
$2.1049
2000+
$2.0832
2500+
$2.0615
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 650 V
  • Capacitance @ Vr, F: 141pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 5-DFN (8x8)
  • Operating Temperature - Junction: 175°C (Max)

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