ZTX1051ASTOA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 40V 4A E-LINE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZTX1051ASTOA Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the ZTX1051ASTOA provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 4A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: 155MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
Related Products
Infineon Technologies
SMBTA64E6327
Microchip Technology
90025-06TX
Microchip Technology
JANSL2N3636
onsemi
KSP77TA
onsemi
MMBTA43LT1G
Harris Corporation
BD534
Microchip Technology
JANTXV2N2484
NXP USA Inc.
PBSS4140S,126
Taiwan Semiconductor Corporation
KTC3198-O A1G
Micro Commercial Co