ZXM62P03GTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 2.9A/4A SOT223
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the ZXM62P03GTA by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ZXM62P03GTA is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
Diodes Incorporated
DMN3033LSNQ-7
IXYS
IXFH75N10
Vishay Siliconix
SIE830DF-T1-GE3
Taiwan Semiconductor Corporation
TSM4N80CZ C0G
onsemi
HUFA76432P3
Vishay Siliconix
SIA448DJ-T1-GE3
Vishay Siliconix
SQ3427EEV-T1-GE3
STMicroelectronics
STF11N52K3
Vishay Siliconix
SI4336DY-T1-E3
onsemi