ZXMN2AMCTA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 2.9A DFN
$1.09
Available to order
Reference Price (USD)
3,000+
$0.49764
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance ZXMN2AMCTA from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the ZXMN2AMCTA delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: DFN3020B-8
Related Products
Vishay Siliconix
SI4963BDY-T1-E3
NXP USA Inc.
PMT560ENEA,115
Microchip Technology
APTC60HM35T3G
onsemi
NVJD4401NT1G
Panjit International Inc.
PJS6839_S1_00001
Texas Instruments
TPS1120DR
Diodes Incorporated
DMN33D8LDWQ-7
Taiwan Semiconductor Corporation
TSM4953DCS RLG
General Electric
GE12047CCA3
Toshiba Semiconductor and Storage