ZXT10N20DE6TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 20V 3.5A SOT23-6
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the ZXT10N20DE6TA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the ZXT10N20DE6TA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3.5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 3.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Related Products
Infineon Technologies
BCP5316H6327XTSA1
onsemi
MPSA18RLRAG
onsemi
MPS751-D26Z
Microchip Technology
JANTXV2N3635UB/TR
Nexperia USA Inc.
BSS63,215
Diodes Incorporated
ZXTP2013GTA
NXP USA Inc.
PDTA123JQA147
Diodes Incorporated
ZXTP23015CFHTA
Diodes Incorporated
BC857BFZ-7B
Diodes Incorporated