ZXT13P12DE6TA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 12V 4A SOT23-6
$0.28
Available to order
Reference Price (USD)
1+
$0.27666
500+
$0.2738934
1000+
$0.2711268
1500+
$0.2683602
2000+
$0.2655936
2500+
$0.262827
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the ZXT13P12DE6TA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the ZXT13P12DE6TA is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 175mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 55MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Related Products
Nexperia USA Inc.
PDTA123EMB,315
Nexperia USA Inc.
PBSS8110TVL
Nexperia USA Inc.
BC807-25QCH-QZ
onsemi
2N5401YTA
onsemi
MJH16006A
onsemi
NSV9435T1G
NTE Electronics, Inc
NTE2699
NTE Electronics, Inc
TIP151
Nexperia USA Inc.
BC52-10PA,115
Infineon Technologies