ZXTD09N50DE6TC
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 50V 1A SOT23-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXTD09N50DE6TC BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The ZXTD09N50DE6TC undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1.1W
- Frequency - Transition: 215MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
Nexperia USA Inc.
BC856S-QX
Panasonic Electronic Components
DMC206E20R
Diodes Incorporated
MMDT4146-7-F
Nexperia USA Inc.
BC856BS/DG/B2,115
Central Semiconductor Corp
MPQ6100A TIN/LEAD
Fairchild Semiconductor
BC80725MTFNL
Texas Instruments
ULN2803ADWRG4
Diotec Semiconductor
BC847S
Rohm Semiconductor
EMZ1FHAT2R
Infineon Technologies