MMDT4146-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 25V 0.2A SOT363
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06300
6,000+
$0.05670
15,000+
$0.05040
30,000+
$0.04725
75,000+
$0.04200
Exquisite packaging
Discount
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Discover the MMDT4146-7-F BJT Array by Diodes Incorporated, a versatile solution for modern electronic designs. This transistor array excels in high-speed switching and linear amplification, featuring matched pairs for consistent performance. Commonly used in audio amplifiers, LED drivers, and power management systems, the MMDT4146-7-F is a staple in telecommunications and renewable energy applications. With robust construction and ESD protection, it meets stringent industry standards while simplifying PCB layout for compact devices.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz, 250MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Diodes Incorporated