
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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BLF882SU
RF FET LDMOS 104V 20.6DB SOT502B
CGHV60170D-GP4
RF MOSFET HEMT 50V DIE
MRF136Y
FET RF 65V 400MHZ 319B-02
PXAD184218FV-V1-R0
RFP-LD10E
BLA9H0912LS-250U
BLA9H0912LS-250/SOT502/TRAY
A2I25D025NR1
IC TRANS RF LDMOS
BLF2425M7LS250P:11
RF FET LDMOS 65V 15DB SOT539B
NPT25015D
HEMT N-CH 28V 23W DC-3GHZ 8SOIC
BLP05M7200Y
RF FET LDMOS 65V 21DB SOT1139
CGH35240F
240W GAN HEMT 28V 3.1-3.5GHZ FET
BLP10H603AZ
RF FET LDMOS 104V 22DB 12VDFN
BLC9G27LS-151AVZ
RF FET LDMOS 65V 15.6DB SOT12583
BLF9G20LS-160VU
RF FET LDMOS 65V 19.8DB SOT1120B
BF1005SE6327HTSA1
MOSFET N-CH 8V 25MA SOT-143
MRF6P23190HR5
POWER, N-CHANNEL, MOSFET
MRF6V12500HR5
FET RF 110V 1.03GHZ NI-780H
NE3515S02-T1D-A
SMALL SIGNAL N-CHANNEL MOSFET
BLF7G27LS-150P,118
RF FET LDMOS 65V 16DB SOT539B
TA9110K
PA RF GAN PWR 6W .03-4GHZ 32V
BLC9H10XS-606AZ
BLC9H10XS-606A/SOT1250/TRAYDP