
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G
BLF888A,112
RF FET LDMOS 110V 21DB SOT539A
BLC10G22XS-400AVTY
BLC10G22XS-400AVT/SOT1258/REEL
WP2806045UH
RF GaN HEMT 28V DC ~ 6GHZ, 45W
BLF974PU
BLF974P/SOT539/TRAY
AFM907NT1
RF MOSFET LDMOS 7.5V 10-DFN
MMRF1312HR5
TRANS 900-1215MHZ 1000W PEAK 50V
SD2933-03W
TRANS RF N-CH HF/VHF/UHF M177
BF1005SE6327
RF N-CHANNEL MOSFET
PTGA090304MD-V1-R5
30W, SI LDMOS IC , 50V, 575-960M
SD4933MR
TRANSISTOR RF MOSFET N-CH M177
GTRA364002FC-V1-R2
400W, GAN HEMT, 48V, 3400-3600MH
PD55003TR-E
FET RF 40V 500MHZ PWRSO-10
AFM906NT1
RF MOSFET LDMOS 10.8V 16DFN
NE3509M04-T2-A
SMALL SIGNAL N-CHANNEL MOSFET
CGH21240F
GAN HEMT 28V 1.8-2.1GHZ
MW6S010NR1
FET RF 68V 960MHZ TO270-2
MRF9135LR5
FET RF 65V 880MHZ NI-780
WPGM0206012
RF GAN HEMT MMIC 2pcs/pack
BLF8G20LS-200V,112
RF FET LDMOS 65V 17DB SOT1120B