2N2857UB
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 0.04A UB
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The 2N2857UB RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2N2857UB is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microsemi Corporation for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
- Gain: 21dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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