2N2879
Microchip Technology
Microchip Technology
POWER BJT
$245.74
Available to order
Reference Price (USD)
1+
$245.74500
500+
$243.28755
1000+
$240.8301
1500+
$238.37265
2000+
$235.9152
2500+
$233.45775
Exquisite packaging
Discount
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Experience unmatched performance with the 2N2879 Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N2879 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
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