2N6579
Microchip Technology
Microchip Technology
POWER BJT
$167.90
Available to order
Reference Price (USD)
1+
$167.89500
500+
$166.21605
1000+
$164.5371
1500+
$162.85815
2000+
$161.1792
2500+
$159.50025
Exquisite packaging
Discount
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The 2N6579 from Microchip Technology is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2N6579 is a reliable choice for both commercial and industrial use. Trust Microchip Technology to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 3mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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