2N3867P
Microchip Technology
Microchip Technology
POWER BJT
$21.51
Available to order
Reference Price (USD)
1+
$21.51000
500+
$21.2949
1000+
$21.0798
1500+
$20.8647
2000+
$20.6496
2500+
$20.4345
Exquisite packaging
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Enhance your circuit designs with the 2N3867P Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N3867P is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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