2N5607
Microchip Technology
Microchip Technology
POWER BJT
$41.38
Available to order
Reference Price (USD)
1+
$41.38500
500+
$40.97115
1000+
$40.5573
1500+
$40.14345
2000+
$39.7296
2500+
$39.31575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the 2N5607 Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N5607 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Microchip Technology for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 25 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Related Products
onsemi
2SC4363-AC
Microchip Technology
JAN2N5666U3
onsemi
2SC536E-SPA-AC
Microchip Technology
2N3879
Microchip Technology
JANSD2N2222AUA
onsemi
2SA1331-5-TB-E
Toshiba Semiconductor and Storage
2SA1244-Y(T6L1,NQ)
onsemi
SBC847BWT1G-M02
Microchip Technology
JANSP2N4449
Microchip Technology