2SA1244-Y(T6L1,NQ)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR; PW-MOLD;
$0.42
Available to order
Reference Price (USD)
1+
$0.42300
500+
$0.41877
1000+
$0.41454
1500+
$0.41031
2000+
$0.40608
2500+
$0.40185
Exquisite packaging
Discount
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Experience unmatched performance with the 2SA1244-Y(T6L1,NQ) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SA1244-Y(T6L1,NQ) delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Toshiba Semiconductor and Storage for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -