2N5610
Microchip Technology
Microchip Technology
POWER BJT
$41.38
Available to order
Reference Price (USD)
1+
$41.38500
500+
$40.97115
1000+
$40.5573
1500+
$40.14345
2000+
$39.7296
2500+
$39.31575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N5610 from Microchip Technology is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2N5610 is a reliable choice for both commercial and industrial use. Trust Microchip Technology to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2.5mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 25 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Related Products
Microsemi Corporation
JANSR2N2221AUB
Microchip Technology
2N2779
Harris Corporation
BDX33DS
Renesas Electronics America Inc
2SD774-T-AZ
Microchip Technology
JANTXV2N918UB
Microchip Technology
JANSP2N5153L
onsemi
LB1214-E-ON
onsemi
2SA1562-E
onsemi
2SB1216T-TL-H
NXP USA Inc.