2N6730
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 100V 2A TO237
$0.96
Available to order
Reference Price (USD)
1+
$0.96000
500+
$0.9504
1000+
$0.9408
1500+
$0.9312
2000+
$0.9216
2500+
$0.912
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N6730 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N6730 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
- Power - Max: 1 W
- Frequency - Transition: 500MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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