TIP141G
onsemi
onsemi
TRANS NPN DARL 80V 10A TO247-3
$2.71
Available to order
Reference Price (USD)
1+
$1.91000
30+
$1.62000
120+
$1.38033
510+
$1.13410
1,020+
$0.93969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TIP141G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the TIP141G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of TIP141G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Rohm Semiconductor
SST3904HZGT116
Infineon Technologies
BCX42E6433HTMA1
Toshiba Semiconductor and Storage
TTC004B,Q
onsemi
MJH6287G
Nexperia USA Inc.
PBSS306PZ,135
Toshiba Semiconductor and Storage
2SC2712-Y,LXHF
onsemi
2SC3647S-TD-E
Diodes Incorporated
ZXTP03200BZTA
Nexperia USA Inc.
BC817K-25R
NTE Electronics, Inc