2SB09510P
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PNP DARL 60V 8A TO220F-A1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SB09510P Bipolar Junction Transistor (BJT) from Panasonic Electronic Components is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2SB09510P is a reliable component for demanding applications. Panasonic Electronic Components's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 4A, 3V
- Power - Max: 2 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-A1
Related Products
Fairchild Semiconductor
FJX2222ATF
Infineon Technologies
BCM856SH6778
onsemi
KSA642CYTA
Micro Commercial Co
MJE13003A-BP
NXP USA Inc.
PMEM4010ND,115
Diodes Incorporated
FZT694BTC
Infineon Technologies
BCR116SE6327
onsemi
2SC5707-E
onsemi
BC549TAR
Panasonic Electronic Components