2SC563200L
Panasonic Electronic Components
Panasonic Electronic Components
RF TRANS NPN 8V 1.1GHZ SMINI3-G1
$0.00
Available to order
Reference Price (USD)
3,000+
$0.12736
Exquisite packaging
Discount
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Discover the 2SC563200L, a premium RF Bipolar Junction Transistor (BJT) by Panasonic Electronic Components, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The 2SC563200L boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Panasonic Electronic Components for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
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