2SC6099-TL-E
onsemi

onsemi
TRANS NPN 100V 2A TPFA
$0.87
Available to order
Reference Price (USD)
700+
$0.34249
1,400+
$0.26756
2,100+
$0.24509
4,900+
$0.23010
17,500+
$0.21512
35,000+
$0.21262
Exquisite packaging
Discount
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Optimize your electronic systems with the 2SC6099-TL-E Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SC6099-TL-E delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
- Power - Max: 800 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TP-FA