2SJ635-TL-E
onsemi
onsemi
2SJ635 - P-CHANNEL SILICON MOSFE
$0.36
Available to order
Reference Price (USD)
1+
$0.36400
500+
$0.36036
1000+
$0.35672
1500+
$0.35308
2000+
$0.34944
2500+
$0.3458
Exquisite packaging
Discount
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Meet the 2SJ635-TL-E by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2SJ635-TL-E stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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