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FCPF190N60E-F152

Fairchild Semiconductor
FCPF190N60E-F152 Preview
Fairchild Semiconductor
FCPF190N60E - POWER MOSFET N-CHA
$1.35
Available to order
Reference Price (USD)
1+
$1.35199
500+
$1.3384701
1000+
$1.3249502
1500+
$1.3114303
2000+
$1.2979104
2500+
$1.2843905
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.6A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack

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