IMW120R014M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$53.30
Available to order
Reference Price (USD)
1+
$53.30000
500+
$52.767
1000+
$52.234
1500+
$51.701
2000+
$51.168
2500+
$50.635
Exquisite packaging
Discount
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The IMW120R014M1HXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IMW120R014M1HXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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