2SK2009TE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 200MA SC59-3
$0.58
Available to order
Reference Price (USD)
3,000+
$0.18755
6,000+
$0.17545
15,000+
$0.16940
Exquisite packaging
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The 2SK2009TE85LF by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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