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SCT3022KLGC11

Rohm Semiconductor
SCT3022KLGC11 Preview
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
$54.85
Available to order
Reference Price (USD)
1+
$102.95000
10+
$97.64100
25+
$94.98400
100+
$92.99150
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
  • Vgs (Max): +22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 427W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3

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