ZXMN10A11KTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 2.4A TO252-2
$0.31
Available to order
Reference Price (USD)
2,500+
$0.33656
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the ZXMN10A11KTC single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's ZXMN10A11KTC for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.11W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Fairchild Semiconductor
FQA10N60C
IXYS
IXTN17N120L
Infineon Technologies
IPP60R250CPXKSA1
Vishay Siliconix
SI4126DY-T1-GE3
Rohm Semiconductor
R6018JNXC7G
Nexperia USA Inc.
PMV35EPER
NXP USA Inc.
BUK652R6-40C,127
Diodes Incorporated
DMP2045UQ-7
Infineon Technologies
IPD78CN10NGATMA1
Infineon Technologies