A2C50S65M2
STMicroelectronics
STMicroelectronics
IGBT MOD 650V 50A 208W ACEPACK2
$69.88
Available to order
Reference Price (USD)
1+
$52.81000
14+
$49.26500
112+
$42.77500
Exquisite packaging
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The A2C50S65M2 from STMicroelectronics exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the A2C50S65M2 in megawatt-level wind turbine converters. With STMicroelectronics's proven track record, the A2C50S65M2 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 2
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