FS75R07U1E4BPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 100A 275W
$129.72
Available to order
Reference Price (USD)
30+
$70.31200
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS75R07U1E4BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS75R07U1E4BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS75R07U1E4BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS75R07U1E4BPSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 275 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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