A2P75S12M3-F
STMicroelectronics

STMicroelectronics
IGBT MOD 1200V 75A ACEPACK2
$88.30
Available to order
Reference Price (USD)
1+
$64.45000
18+
$60.54278
108+
$54.29343
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics's A2P75S12M3-F sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the A2P75S12M3-F in your traction inverters or high-energy physics experiments for unparalleled performance. Trust STMicroelectronics to deliver cutting-edge IGBT solutions with the A2P75S12M3-F power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 454.5 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 2