NXH350N100H4Q2F2P1G
onsemi
onsemi
IC PWR MODULE 1000V 350A PIM42
$172.44
Available to order
Reference Price (USD)
1+
$172.44000
500+
$170.7156
1000+
$168.9912
1500+
$167.2668
2000+
$165.5424
2500+
$163.818
Exquisite packaging
Discount
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Optimize your power systems with onsemi's NXH350N100H4Q2F2P1G, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH350N100H4Q2F2P1G is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH350N100H4Q2F2P1G module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 303 A
- Power - Max: 276 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 42-PIM/Q2PACK (93x47)
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