A2T18S162W31SR3
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
250+
$102.34604
Exquisite packaging
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The A2T18S162W31SR3 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the A2T18S162W31SR3 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s A2T18S162W31SR3 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.84GHz
- Gain: 20.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-2L2LA
- Supplier Device Package: NI-780S-2L2LA
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