A3G26H350W17SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR,
$206.75
Available to order
Reference Price (USD)
1+
$206.74860
500+
$204.681114
1000+
$202.613628
1500+
$200.546142
2000+
$198.478656
2500+
$196.41117
Exquisite packaging
Discount
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Designed for superior RF performance, the A3G26H350W17SR3 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A3G26H350W17SR3 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A3G26H350W17SR3 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 13.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 59W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4S2S
- Supplier Device Package: NI-780S-4S2S
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