AFGB40T65SQDN
onsemi
onsemi
650V/40A FS4 IGBT TO263 A
$5.04
Available to order
Reference Price (USD)
800+
$2.74950
1,600+
$2.34000
2,400+
$2.23500
Exquisite packaging
Discount
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The AFGB40T65SQDN Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the AFGB40T65SQDN provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 238 W
- Switching Energy: 858µJ (on), 229µJ (off)
- Input Type: Standard
- Gate Charge: 76 nC
- Td (on/off) @ 25°C: 17.6ns/75.2ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 131 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-3 (TO-263-3)
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