AIHD03N60RFATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO252-3
$0.00
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Reference Price (USD)
2,500+
$0.59594
Exquisite packaging
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The AIHD03N60RFATMA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The AIHD03N60RFATMA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate AIHD03N60RFATMA1 into your projects for superior results.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 5 A
- Current - Collector Pulsed (Icm): 7.5 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
- Power - Max: 53.6 W
- Switching Energy: 50µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 17.1 nC
- Td (on/off) @ 25°C: 10ns/128ns
- Test Condition: 400V, 2.5A, 68Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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