AIHD15N60RFATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO252-3
$0.00
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Reference Price (USD)
2,500+
$1.21480
Exquisite packaging
Discount
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Enhance your electronic projects with the AIHD15N60RFATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the AIHD15N60RFATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose AIHD15N60RFATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: 240 W
- Switching Energy: 270µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 13ns/160ns
- Test Condition: 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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