APT15GN120KG
Microsemi Corporation

Microsemi Corporation
IGBT 1200V 45A 195W TO220
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The APT15GN120KG Single IGBT transistor by Microsemi Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The APT15GN120KG ensures precise power control and long-term stability. With Microsemi Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate APT15GN120KG into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 195 W
- Switching Energy: 410µJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 10ns/150ns
- Test Condition: 800V, 15A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]