IXGX120N120B3
IXYS
IXYS
IGBT 1200V 200A 830W PLUS247
$0.00
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Reference Price (USD)
30+
$22.40167
Exquisite packaging
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The IXGX120N120B3 by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXGX120N120B3 delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXGX120N120B3 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 370 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Power - Max: 830 W
- Switching Energy: 5.5mJ (on), 5.8mJ (off)
- Input Type: Standard
- Gate Charge: 470 nC
- Td (on/off) @ 25°C: 36ns/275ns
- Test Condition: 600V, 100A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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