APT25GT120BRDQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 54A 347W TO247
$8.23
Available to order
Reference Price (USD)
1+
$9.91000
10+
$8.91600
25+
$8.12360
100+
$7.33100
250+
$6.73660
500+
$6.14218
1,000+
$5.34965
Exquisite packaging
Discount
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Upgrade your power management systems with the APT25GT120BRDQ2G Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the APT25GT120BRDQ2G provides reliable and efficient operation. Microchip Technology's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose APT25GT120BRDQ2G for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
- Power - Max: 347 W
- Switching Energy: 930µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 14ns/150ns
- Test Condition: 800V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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